IRFR/U3711Z
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
20
–––
–––
V
VGS = 0V, ID = 250µA
∆ΒVDSS/∆TJ
RDS(on)
Breakdown Voltage Temp. Coefficient –––
13
––– mV/°C Reference to 25°C, ID = 1mA
mΩ
Static Drain-to-Source On-Resistance
–––
–––
1.55
–––
–––
–––
–––
–––
48
4.5
6.2
2.0
-5.4
–––
–––
–––
5.7
7.8
VGS = 10V, ID = 15A
VGS = 4.5V, ID = 12A
VDS = VGS, ID = 250µA
VGS(th)
Gate Threshold Voltage
2.45
V
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
1.0
150
100
µA
V
DS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
nA VGS = 20V
VGS = -20V
––– -100
gfs
–––
18
–––
27
S
VDS = 10V, ID = 12A
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
td(on)
tr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
5.1
1.8
6.5
4.6
8.3
9.8
12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
VDS = 10V
GS = 4.5V
D = 12A
See Fig. 16
nC
V
I
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
nC VDS = 10V, VGS = 0V
DD = 15V, VGS = 4.5V
Turn-On Delay Time
Rise Time
V
13
ID = 12A
td(off)
tf
Turn-Off Delay Time
Fall Time
15
ns Clamped Inductive Load
5.2
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 2160 –––
VGS = 0V
pF VDS = 10V
ƒ = 1.0MHz
–––
–––
700
360
–––
–––
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
–––
–––
Max.
140
12
Units
mJ
A
EAS
IAR
Avalanche Current
Repetitive Avalanche Energy
EAR
7.9
mJ
Diode Characteristics
Parameter
Continuous Source Current
Min. Typ. Max. Units
Conditions
MOSFET symbol
93
IS
–––
–––
(Body Diode)
A
showing the
ISM
Pulsed Source Current
–––
–––
370
integral reverse
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
–––
–––
–––
–––
19
1.0
28
14
V
T = 25°C, I = 12A, V = 0V
J S GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 12A, VDD = 10V
J F
Qrr
ton
di/dt = 100A/µs
9.4
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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