IRFR3518/IRFU3518
100000
12
10
8
V
C
= 0V,
f = 1 MHZ
GS
I = 18A
D
= C + C , C SHORTED
iss
gs gd ds
V
V
V
= 40V
= 64V
= 16V
DS
DS
DS
C
= C
gd
rss
C
= C + C
oss
ds gd
10000
1000
100
C
iss
6
C
oss
4
2
C
rss
0
10
0
10
20
30
40
1
10
100
V
, Drain-to-Source Voltage (V)
Q
Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100
10
1
°
T = 175
C
J
100µsec
1msec
°
T = 25
J
C
1
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
V
= 0 V
GS
0.1
0.1
0.0
0.5
1.0
1.5
2.0
1
10
100
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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