IRFR3518/IRFU3518
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
80 ––– –––
––– 0.09 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
24
29
mΩ VGS = 10V, ID = 18A
––– 4.0
V
VDS = VGS, ID = 250µA
VDS = 80V, VGS = 0V
VDS = 64V, VGS = 0V, TJ = 150°C
VGS = 20V
––– ––– 20
––– ––– 250
––– ––– 200
––– ––– -200
IDSS
Drain-to-Source Leakage Current
µA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
IGSS
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 25V, ID = 18A
ID = 18A
gfs
34
––– –––
37 56
S
Qg
–––
–––
–––
–––
–––
–––
–––
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
11 –––
12 –––
12 –––
25 –––
37 –––
13 –––
nC VDS = 40V
VGS = 10V
VDD = 40V
ID = 18A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 9.1Ω
VGS = 10V
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 1710 –––
––– 270 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
–––
33 –––
pF
ƒ = 1.0MHz
––– 1780 –––
––– 170 –––
––– 330 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 64V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 64V ꢀ
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
–––
–––
Max.
160
18
Units
mJ
EAS
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
11
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
38
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
––– ––– 150
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 77 –––
––– 210 –––
V
TJ = 25°C, IS = 18A, VGS = 0V
ns
TJ = 25°C, IF = 18A
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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