IRFR/U3410PbF
20
16
12
8
100000
V
= 0V,
f = 1 MHZ
GS
I = 18A
D
V
= 80V
C
= C + C
,
C
SHORTED
DS
iss
gs
gd
ds
VDS= 50V
VDS= 20V
C
= C
rss
gd
C
= C + C
10000
1000
100
oss
ds
gd
Ciss
Coss
Crss
4
0
10
0
10
Q
20
30
40
50
60
1
10
100
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000.0
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100.0
10.0
1.0
T
= 175°C
J
100µsec
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
T
= 25°C
J
V
= 0V
GS
0.1
0.1
1
10
100
1000
0.0
0.5
1.0
1.5
2.0
V
, Drain-toSource Voltage (V)
V
, Source-toDrain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
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