IRFR/U3410PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
100 ––– –––
––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance ––– 34 39 mΩ VGS = 10V, ID = 18A
––– 4.0
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
Gate Threshold Voltage
2.0
V
VDS = VGS, ID = 250µA
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
VGS = 20V
––– ––– 20
––– ––– 250
––– ––– 200
––– ––– -200
IDSS
Drain-to-Source Leakage Current
µA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
nA
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
33 ––– –––
––– 37 56
Conditions
VDS = 25V, ID = 18A
ID = 18A
gfs
S
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
10 –––
11 –––
12 –––
27 –––
40 –––
13 –––
nC VDS = 50V
VGS = 10V,
VDD = 50V
ID = 18A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 9.1Ω
VGS = 10V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 1690 –––
––– 220 –––
VGS = 0V
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
–––
26 –––
ƒ = 1.0MHz
––– 1640 –––
––– 130 –––
––– 250 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V ꢀ
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
Max.
140
18
Units
mJ
EAS
IAR
Avalanche Current
–––
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
––– –––
31
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
––– ––– 125
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 84 –––
––– 260 –––
V
TJ = 25°C, IS = 18A, VGS = 0V
ns
TJ = 25°C, IF = 18A
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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