IRFR/U2407
20
16
12
8
I
D
= 25A
4000
V
= 0V,
f = 1 MHZ
GS
V
V
V
= 60V
= 37V
= 15V
DS
DS
DS
C
= C + C
,
C
SHORTED
iss
gs gd
ds
C
= C
gd
rss
C
= C + C
oss
ds
gd
3000
2000
1000
0
Ciss
Coss
Crss
4
FOR TEST CIRCUIT
SEE FIGURE 13
1
10
100
0
0
20
40
60
80
100
120
V
, Drain-to-Source Voltage (V)
DS
Q
, Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
10
1
10us
°
T = 175 C
J
100us
1ms
°
T = 25 C
J
°
T = 25 C
C
J
10ms
°
T = 175 C
V
= 0 V
GS
2.0
Single Pulse
1
0.4
0.8
1.2
1.6
2.4
1
10
100
1000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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