IRFR/U2407
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
75 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.078 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance ––– 0.0218 0.026
Ω
V
S
VGS = 10V, ID = 25A
VDS = 10V, ID = 250µA
VDS = 25V, ID = 25A
VDS = 75V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 150°C
VGS = 20V
Gate Threshold Voltage
2.0
27
––– 4.0
––– –––
Forward Transconductance
––– ––– 20
––– ––– 250
––– ––– 200
––– ––– -200
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
–––
–––
–––
–––
–––
–––
–––
74 110
ID = 25A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
13
22
19
34
nC VDS = 60V
VGS = 10V
VDD = 38V
16 –––
90 –––
65 –––
66 –––
ID = 25A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.8Ω
VGS = 10V
D
Between lead,
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
4.5 –––
6mm (0.25in.)
nH
G
from package
–––
7.5
and center of die contact
S
Ciss
Input Capacitance
––– 2400 –––
––– 340 –––
VGS = 0V
Coss
Output Capacitance
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
Output Capacitance
–––
77 –––
ƒ = 1.0MHz, See Fig. 5
Coss
––– 15700 –––
––– 220 –––
––– 220 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 60V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance ꢀ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
––– –––
––– –––
42
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
170
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 100 150
––– 400 600
V
TJ = 25°C, IS = 25A, VGS = 0V
ns
TJ = 25°C, IF = 25A
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
ꢀCoss eff. is a fixed capacitance that gives the same charging time
Starting TJ = 25°C, L = 0.42mH
RG = 25Ω, IAS = 25A.
as Coss while VDS is rising from 0 to 80% VDSS
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A
ISD ≤ 25A, di/dt ≤ 290A/µs, VDD ≤ V(BR)DSS
,
TJ ≤ 175°C
2
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