IRFR/U220N
20
16
12
8
10000
I
D
= 2.9A
V
= 0V,
f = 1 MHZ
GS
C
= C + C
,
C
ds
SHORTED
iss
gs
gd
V
V
V
= 160V
= 100V
= 40V
DS
DS
DS
C
= C
rss
gd
C
= C + C
oss
ds
gd
1000
100
10
Ciss
Coss
Crss
4
FOR TEST CIRCUIT
SEE FIGURE 13
1
0
0
5
10
15
20
25
1
10
100
1000
Q
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
10
°
T = 175 C
J
100us
1ms
1
°
T = 25 C
J
°
T = 25 C
10ms
C
°
T = 175 C
Single Pulse
J
V
= 0 V
GS
0.1
0.4
0.1
0.6
0.8
1.0
1.2
1
10
100
1000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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