IRFR/U220N
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
200 ––– –––
––– 0.23 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 600 mΩ VGS = 10V, ID = 2.9A
2.0 ––– 4.0
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
VDS = VGS, ID = 250µA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 150°C
VGS = 20V
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
IDSS
Drain-to-Source Leakage Current
µA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
IGSS
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 50V, ID = 2.9A
ID = 2.9A
gfs
2.6
–––
–––
–––
–––
–––
–––
–––
––– –––
15 23
S
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
2.4 3.6
6.1 9.2
6.4 –––
11 –––
20 –––
12 –––
nC VDS = 160V
VGS = 10V,
VDD = 100V
ID = 2.9A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 24Ω
VGS = 10V
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 300 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
53 –––
15 –––
VDS = 25V
pF
ƒ = 1.0MHz
––– 300 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 160V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 160V ꢀ
–––
–––
23 –––
46 –––
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
Max.
46
Units
mJ
EAS
IAR
–––
–––
–––
Avalanche Current
2.9
A
EAR
Repetitive Avalanche Energy
4.3
mJ
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
–––
–––
Max.
3.5
Units
RθJC
RθJA
RθJA
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
50
°C/W
110
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
5.0
20
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 90 140
––– 320 480
V
TJ = 25°C, IS = 2.9A, VGS = 0V
ns
TJ = 25°C, IF = 2.9A
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.kersemi.com
KERSEMI [ Kersemi Electronic Co., Ltd. ]
