AUIRFR1010Z
5000
VGS, Gate-to-Source Voltage (V)
4000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
20
ID= 42A
VDS = 44V
VDS= 28V
VDS= 11V
16
C, Capacitance(pF)
3000
Ciss
12
2000
8
1000
Coss
Crss
4
0
0
20
40
60
80
100
10
100
0
1
VDS , Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
10000
ISD, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100.00
TJ = 175°C
10.00
1000
100
100μsec
1msec
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
VDS , Drain-toSource Voltage (V)
10
1.00
TJ = 25°C
VGS = 0V
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
1
0.10
0.1
DC
100
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
5
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