IRFR1010ZTRL 参数 Datasheet PDF下载

AUIRFR1010Z

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Advanced Process Technology

Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

D

G

S

V

DSS

R

DS(on)

typ.

max.

I

D (Silicon Limited)

I

D (Package Limited)

55V

5.8m

Ω

7.5m

Ω

91A

42A

Description

Specifically designed for Automotive applications,

this HEXFET

®

Power MOSFET utilizes the latest

processing techniques to achieve extremely low

on-resistance per silicon area. Additional features

of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitive avalanche rating . These features com-

bine to make this design an extremely efficient and

reliable device for use in Automotive applications

and a wide variety of other applications.

D

S

G

D-Pak

AUIRFR1010Z

G

D

S

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T

A

) is 25°C, unless otherwise specified.

Parameter

I

D

@ T

C

= 25°C

I

D

@ T

C

= 100°C

I

D

@ T

C

= 25°C

I

DM

P

D

@T

C

= 25°C

V

GS

E

AS

E

AS

(tested )

I

AR

E

AR

T

J

T

STG

Continuous Drain Current, V

GS

@ 10V (Silicon Limited)

Continuous Drain Current, VGS @ 10V (Silicon Limited)

Continuous Drain Current, V

GS

@ 10V (Package Limited)

Pulsed Drain Current

Max.

91

65

42

360

140

0.9

± 20

110

220

See Fig.12a, 12b, 15, 16

-55 to + 175

Units

A

™

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

W

W/°C

V

mJ

A

mJ

°C

Ù

h

d

g

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case )

Thermal Resistance

R

θJC

R

θJA

R

θJA

300

Junction-to-Case

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

j

Parameter

Typ.

–––

–––

–––

Max.

1.11

40

110

Units

°C/W

i

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1

06/16/11