IRFR/U3504
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
40 ––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.041 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance –––
7.8
9.2
mΩ VGS = 10V, ID = 30A
Gate Threshold Voltage
2.0
40
––– 4.0
––– –––
V
VDS = 10V, ID = 250µA
VDS = 10V, ID = 30A
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 20V
Forward Transconductance
S
––– ––– 20
––– ––– 250
––– ––– 200
––– ––– -200
µA
nA
IDSS
IGSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -20V
Qg
Qgs
Qgd
td(on)
tr
–––
–––
–––
–––
–––
–––
–––
–––
48
12
13
71
18
20
ID = 30A
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
nC VDS = 32V
VGS = 10V
VDD = 20V
11 –––
53 –––
36 –––
22 –––
4.5 –––
Rise Time
ID = 30A
ns
td(off)
tf
Turn-Off Delay Time
RG = 6.8Ω
Fall Time
VGS = 10V
D
S
LD
Internal Drain Inductance
Between lead,
nH 6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5 –––
and center of die contact
Ciss
Input Capacitance
––– 2150 –––
––– 580 –––
VGS = 0V
Coss
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
Output Capacitance
–––
46 –––
pF
ƒ = 1.0MHz, See Fig. 5
Coss
––– 2830 –––
––– 510 –––
––– 870 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance ꢀ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
87
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
350
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.3
––– 53 80
––– 86 130
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
TJ = 25°C, IS = 30A, VGS = 0V
ns
TJ = 25°C, IF = 30A, VDD = 20V
Qrr
ton
nC di/dt = 100A/µs
2
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