PD - 94499A
AUTOMOTIVE MOSFET
IRFR3504
IRFU3504
HEXFET
®
Power MOSFET
D
Features
●
●
●
●
●
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
G
V
DSS
= 40V
R
DS(on)
= 9.2mΩ
S
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Addi-
tional features of this product are a 175°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating. These features combine to make this design
an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
I
D
= 30A
D-Pak
IRFR3504
I-Pak
IRFU3504
Absolute Maximum Ratings
Parameter
I
D
@ T
C
I
D
@ T
C
I
D
@ T
C
I
DM
P
D
@T
C
= 25°C
= 100°C
= 25°C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon limited)
Continuous Drain Current, V
GS
@ 10V (See Fig.9)
Continuous Drain Current, V
GS
@ 10V (Package limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
87
61
30
350
140
0.92
± 20
240
480
See Fig.12a, 12b, 15, 16
-55 to + 175
Units
A
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
W
W/°C
V
mJ
A
mJ
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.09
50
110
Units
°C/W
www.kersemi.com
1
12/11/02
KERSEMI [ Kersemi Electronic Co., Ltd. ]
