IRFR/U2607ZPbF
2400
20
16
12
8
V
C
= 0V,
f = 1 MHZ
GS
I
= 30A
D
= C + C , C SHORTED
iss
gs
gd ds
V
= 60V
DS
C
= C
2000
1600
1200
800
400
0
rss
gd
VDS= 30V
VDS= 12V
C
= C + C
oss
ds
gd
Ciss
4
Coss
Crss
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
10
20
30
40
50
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000.0
1000
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100.0
10.0
1.0
100
10
1
T
= 175°C
J
100µsec
T
= 25°C
10msec
J
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
DC
V
= 0V
GS
0.1
0.1
1
10
100
1000
0.0
0.4
V
0.8
1.2
1.6
2.0
2.4
V
, Drain-toSource Voltage (V)
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
www.kersemi.com
KERSEMI [ Kersemi Electronic Co., Ltd. ]
