IRFR/U2607ZPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
75 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.074 ––– V/°C Reference to 25°C, ID = 1mA
mΩ
V
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
17.6
–––
–––
–––
–––
–––
22
4.0
–––
20
VGS = 10V, ID = 30A
VDS = VGS, ID = 50µA
VDS = 25V, ID = 30A
Forward Transconductance
36
S
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
µA
V
DS = 75V, VGS = 0V
VDS = 75V, VGS = 0V, TJ = 125°C
nA VGS = 20V
GS = -20V
ID = 30A
250
200
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
––– -200
V
Qg
Qgs
Qgd
td(on)
tr
34
8.9
14
14
59
39
28
4.5
51
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
–––
–––
–––
–––
–––
–––
–––
nC
V
V
DS = 60V
GS = 10V
VDD = 38V
ID = 30A
Rise Time
td(off)
tf
Turn-Off Delay Time
ns
RG = 15 Ω
Fall Time
VGS = 10V
LD
Internal Drain Inductance
Between lead,
nH 6mm (0.25in.)
from package
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
VGS = 0V
DS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Ciss
Input Capacitance
––– 1440 –––
Coss
Output Capacitance
–––
–––
–––
–––
–––
190
110
720
130
230
–––
–––
–––
–––
–––
V
Crss
Reverse Transfer Capacitance
Output Capacitance
Coss
Coss
Output Capacitance
VGS = 0V, VDS = 60V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
Coss eff.
Effective Output Capacitance
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
Continuous Source Current
–––
–––
45
MOSFET symbol
S
(Body Diode)
A
showing the
I
Pulsed Source Current
–––
–––
180
integral reverse
SM
(Body Diode)
p-n junction diode.
V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
30
1.3
45
42
V
T = 25°C, I = 30A, V = 0V
J S GS
SD
t
ns T = 25°C, I = 30A, VDD = 38V
J F
rr
di/dt = 100A/µs
Q
28
nC
rr
t
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
2
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