IRF1404S/LPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
40
–––
–––
2.0
106
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= 250µA
0.036 ––– V/°C Reference to 25°C, I
D
= 1mA
0.00350.004
Ω
V
GS
= 10V, I
D
= 95A
––– 4.0
V
V
DS
= 10V, I
D
= 250µA
––– –––
S
V
DS
= 25V, I
D
= 60A
––– 20
V
DS
= 40V, V
GS
= 0V
µA
––– 250
V
DS
= 32V, V
GS
= 0V, T
J
= 150°C
––– 200
V
GS
= 20V
nA
––– -200
V
GS
= -20V
160 200
I
D
= 95A
35 –––
nC V
DS
= 32V
42
60
V
GS
= 10V
17 –––
V
DD
= 20V
140 –––
I
D
= 95A
ns
72 –––
R
G
= 2.5Ω
26 –––
R
D
= 0.21Ω
Between lead,
nH
7.5 –––
and center of die contact
7360 –––
V
GS
= 0V
1680 –––
V
DS
= 25V
240 –––
pF
ƒ = 1.0MHz, See Fig. 5
6630 –––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
1490 –––
V
GS
= 0V, V
DS
= 32V, ƒ = 1.0MHz
1540 –––
V
GS
= 0V, V
DS
= 0V to 32V
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 162
showing the
A
G
integral reverse
––– ––– 650
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 95A, V
GS
= 0V
––– 71 110
ns
T
J
= 25°C, I
F
= 95A
––– 180 270
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting T
J
= 25°C, L = 0.12mH
R
G
= 25Ω, I
AS
= 95A. (See Figure 12)
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A
I
SD
≤
95A, di/dt
≤
150A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Use IRF1404 data and test conditions.
Pulse width
≤
300µs; duty cycle
≤
2%.
*
When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
2
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KERSEMI [ Kersemi Electronic Co., Ltd. ]
