PD -95104
l
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Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
HEXFET
®
HEXFET
®
Power MOSFET
D
IRF1404SPbF
IRF1404LPbF
V
DSS
= 40V
R
DS(on)
= 0.004Ω
G
S
Description
Seventh Generation
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
I
D
= 162A
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF1404L) is available for low-
profile applications.
D
2
Pak
IRF1404SPbF
TO-262
IRF1404LPbF
Absolute Maximum Ratings
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
162
115
650
3.8
200
1.3
± 20
519
95
20
5.0
-55 to +175
-55 to +175
300 (1.6mm from case )
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
www.kersemi.com
Junction-to-Case
Junction-to-Ambient (PCB mounted, steady-state)
*
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
1
03/11/04
KERSEMI [ Kersemi Electronic Co., Ltd. ]
