FQD1N60C / FQU1N60C
10
0
I
D
, Drain Current [A]
I
D
, Drain Current [A]
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
10
0
150 C
-55 C
25 C
o
o
o
10
-1
※
Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
℃
※
Notes :
1. V
DS
= 40V
2. 250
μ
s Pulse Test
10
-2
10
-1
-1
10
10
0
10
1
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
30
25
R
DS(ON)
[Ω ],
Drain-Source On-Resistance
V
GS
= 10V
20
I
DR
, Reverse Drain Current [A]
10
0
15
10
V
GS
= 20V
150
℃
25
℃
10
-1
5
※
Note : T
J
= 25℃
※
Notes :
1. V
GS
= 0V
2. 250μ s Pulse Test
0
0.0
0.5
1.0
1.5
2.0
2.5
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
250
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
12
200
10
V
DS
= 120V
V
DS
= 300V
C
iss
V
GS
, Gate-Source Voltage [V]
8
Capacitance [pF]
150
V
DS
= 480V
C
oss
100
※
Notes ;
1. V
GS
= 0 V
2. f = 1 MHz
6
4
50
C
rss
2
※
Note : I
D
= 1A
0
-1
10
0
10
0
10
1
0
1
2
3
4
5
6
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
KERSEMI [ Kersemi Electronic Co., Ltd. ]
