FQD1N60C / FQU1N60C
FQD1N60C / FQU1N60C
600V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
• 1A, 600V, R
DS(on)
= 11.5Ω @V
GS
= 10 V
• Low gate charge ( typical 4.8nC)
transistors are produced using Corise Semiconductorÿs proprietary,
• Low Crss ( typical 3.5 pF)
planar stripe, DMOS technology.
• Fast switching
This advanced technology has been especially tailored to
• 100% avalanche tested
minimize on-state resistance, provide superior switching
• Improved dv/dt capability
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
D
D
!
●
◀
▲
●
●
G
S
D-PAK
FQD Series
I-PAK
G D S
FQU Series
G
!
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQD1N60C / FQU1N60C
600
1
0.6
4
±
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C)*
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
33
1
2.8
4.5
2.5
28
0.22
-55 to +150
300
Thermal Characteristics
Symbol
R
θJC
R
θJA
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
Typ
--
--
--
Max
4.53
50
110
Units
°C/W
°C/W
°C/W