1.2
1.1
1.0
0.9
0.8
3.0
2.5
2.0
1.5
1.0
0.5
0.0
※Notes :
1. V = 0 V
※
Notes :
2. IDG=S 250 μ A
1. V = 10 V
2. IDG=S 4.75 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
T, Junction Temperature [oC]
J
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
2
10
Operation in This Area
is Limited by R DS(on)
10 µs
Operation in This Area
is Limited by R DS(on)
2
10
10 µs
100 µs
100 µs
1
1
10
10
1 ms
10 ms
1 ms
10 ms
100 ms
100 ms
DC
DC
0
10
0
10
※
Notes :
-1
10
1. TC = 25 oC
※
Notes :
1. TC = 25 oC
2. T = 150 oC
3. Single Pulse
J
2. T = 150 oC
3. Single Pulse
J
-1
10
0
10
1
10
2
10
3
10
-2
10
0
10
1
10
2
10
3
10
V , Drain-Source Voltage [V]
DS
VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for FQP10N60C
Figure 9-2. Maximum Safe Operating Area
for FQPF10N60C
10
8
6
4
2
0
25
50
75
100
125
150
℃
TC, Case Temperature [
]
Figure 10. Maximum Drain Current
vs Case Temperature
KERSEMI [ Kersemi Electronic Co., Ltd. ]
