VGS
15.0 V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
Top :
101
101
150oC
Bottom: 4.5 V
-55oC
25oC
100
100
※
Notes :
※
Notes :
μ
1. V = 40V
2. 250 s Pulse Test
DS μ
1. 250 s Pulse Test
2. TC = 25
℃
-1
10
-1
10
2
4
6
8
10
100
101
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
2.0
1.5
1.0
0.5
0.0
101
VGS = 10V
100
℃
150
VGS = 20V
※
Notes :
1. V = 0V
℃
25
GS μ
2. 250 s Pulse Test
※
℃
Note: T = 25
J
-1
10
0
5
10
15
20
25
30
35
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
3000
2500
2000
1500
1000
500
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = C + C
gd
C
rss = Cds
VDS = 120V
VDS = 300V
gd
C
iss
VDS = 480V
C
oss
6
※
Notes ;
4
1. VGS = 0 V
2. f =1 MHz
C
rss
2
※
Note: ID = 9.5A
40
0
0
10
0
10
20
30
50
-1
100
101
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
KERSEMI [ Kersemi Electronic Co., Ltd. ]
