K3520PQ-XH
Electrical Characteristics (Ta=25℃ Unless otherwise noted)
CHARACTERISTIC
Drain to Source Breakdown Voltage
Gate to Source Breakdown Voltage
Drain Cut-off Current
SYMBOL
V(BR)DSS
V(BR)GSS
IDSS
TEST CONDITION
ID = 250μA, VGS = 0V
IG = ±100㎂, VDS = 0V
VDS = 24V, VGS = 0V
MIN
TYP
-
MAX
UNIT
V
24
-
-
V
±12
±14
-
-
1.0
㎂
㎂
IGSS
Gate to Source Leakage Current
Gate to Source Threshold Voltage
VGS = ±12V, VDS = 0V
VDS=VGS, ID=250 A
VGS = 4.5V, ID = 1.0A
VGS = 3.9V, ID = 1.0A
VGS = 3.5V, ID = 1.0A
-
-
±10
Vth
0.5
1.1
12.5
13.5
15.0
3.0
600
115
83
1.5
V
-
16.0
mΩ
mΩ
mΩ
kΩ
RDS(on)
Drain to Source On Resistance
-
17.0
-
20.0
Rg
Ciss
Coss
Crss
Qg
Gate Resistance
f=1MHz
-
-
Input Capacitance
-
-
VDS = 10V, VGS = 0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
-
-
pF
-
-
-
6.0
0.8
2.5
0.70
-
Qgs
Qgd
VSD
VDD=10V, VGS=3.9V, IS=4.0A
VGS = 0V, IS = 1.0A
Gate-Source Charge
Gate-Drain Charge
-
-
-
-
nC
V
Source-Drain Forward Voltage
0.50
0.86
2010. 4. 29
Revision No : 0
2/3
KEC [ KEC(KOREA ELECTRONICS) ]
