SEMICONDUCTOR
TECHNICAL DATA
General Description
The K3520PQ-XH is a Dual N-channel MOSFET designed for use as a
bi-directional load switch, facilitated by its common-drain configuration.
K3520PQ-XH
Common-Drain Dual N-Channel
Enhancement Mode Field Effect Transistor
2000
S2
FEATURES
・
Low on-state resistance
R
DS(ON)1
= 16mΩ MAX (V
GS
=4.5V, I
S
=1.0A)
R
DS(ON)2
= 17mΩ MAX (V
GS
=3.9V, I
S
=1.0A)
R
DS(ON)3
= 20mΩ MAX (V
GS
=3.5V, I
S
=1.0A)
G2
1080
S1
G1
BOTTOM : COMMON DRAIN
_
180
+
10 m
MAXIMUM RATING
(Ta=25℃ Unless otherwise noted)
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
Storage Temperature Range
SYMBOL
V
DSS
V
GSS
T
stg
RATING
24
±12
-55�½�150
UNIT
V
V
℃
Equivalent Circuit
D
D
G1
Rg
G2
Rg
S1
S2
2010. 4. 29
Revision No : 0
1/3
KEC [ KEC(KOREA ELECTRONICS) ]
