2N7002A
ELECTRICAL CHARACTERISTICS (Ta=25
ON CHARACTERISTICS (Note 1)
)
CHARACTERISTIC
Gate Threshold Voltage
SYMBOL
Vth
TEST CONDITION
MIN.
TYP.
2.1
MAX.
UNIT
V
1
-
2.5
5
VDS=VGS, ID=250 A
VGS=10V, ID=500mA
VGS=5V, ID=50mA
VGS=10V, ID=500mA
VGS=5V, ID=50mA
1.8
RDS(ON)
Drain-Source ON Resistance
Drain-Source ON Voltage
-
-
5
-
0.6
1.0
0.2
-
VDS(ON)
V
-
0.09
2700
320
ID(ON)
gFS
On State Drain Current
500
80
mA
mS
VGS=10V, VDS
= 2 VDS(ON)
VDS=2VDS(ON), ID=200mA
Forward Transconductance
-
Note 1) Pulse Test : Pulse Width 300 , Duty Cycle 2.0%
DYNAMIC CHARACTERISTICS
CHARACTERISTIC
Input Capacitance
SYMBOL
Ciss
TEST CONDITION
MIN.
TYP.
MAX.
50
UNIT
pF
-
-
-
-
-
20
4
Crss
VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
Output Capacitance
5
Coss
11
-
25
ton
Turn-On Time
Turn-Off Time
20
VDD=30V, RL=150 , ID=200mA,
Switching Time
nS
toff
VGS=10V, RGEN=25
-
20
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RAINGS
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
-
TYP.
-
MAX.
115
UNIT
mA
Maximum Continuous Drain-Source
Diode Forward Current
IS
-
Maximum Pulsed Drain-Source
Diode Forward Current
ISM
-
-
-
-
800
1.5
mA
V
VSD
VGS=0V, IS=115mA (Note1)
Drain-Source Diode Forward Voltage
0.88
2008. 4. 4
Revision No : 5
2/4
KEC [ KEC(KOREA ELECTRONICS) ]
