2N7002A
SEMICONDUCTOR
N CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES
High density cell design for low RDS(ON)
Voltage controolled small signal switch.
Rugged and reliable.
.
High saturation current capablity.
MAXIMUM RATING (Ta=25
)
CHARACTERISTIC
Drain-Source Voltage
SYMBOL
VDSS
VDGR
VGSS
ID
RATING
UNIT
V
60
60
V
Drain-Gate Voltage (RGS
Gate-Source Voltage
1
)
V
20
115
800
200
150
Continuous
Pulsed
Drain Current
mA
IDP
PD
Drain Power Dissipation
Junction Temperature
mW
Tj
Tstg
Storage Temperature Range
-55 150
EQUIVALENT CIRCUIT
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
SYMBOL
BVDSS
IDSS
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
V
60
-
-
-
-
-
-
1
VGS=0V, ID=10 A
VDS=60V, VGS=0V
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
A
IGSSF
-
1
A
IGSSR
-
-1
A
2008. 4. 4
Revision No : 5
1/4
KEC [ KEC(KOREA ELECTRONICS) ]
