R
JCS7N65B
电特性 ELECTRICAL CHARACTERISTICS
开关特性Switching Characteristics
延迟时间Turn-On delay time
上升时间Turn-On rise time
延迟时间Turn-Off delay time
下降时间Turn-Off Fall time
栅极电荷总量Total Gate Charge
栅-源电荷Gate-Source charge
栅-漏电荷Gate-Drain charge
td(on)
tr
VDD=300V,ID=7A,RG=25Ω
(note 4,5)
-
-
-
-
-
-
-
30 70 ns
80 170 ns
125 260 ns
60 110 ns
25 35 nC
td(off)
tf
V
DS =520V ,
ID=7A
GS =10V (note 4,5)
Qg
Qgs
Qgd
6.0
10
-
-
nC
nC
V
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain
-Source Diode Forward Current
正向最大脉冲电流
IS
-
-
-
-
-
-
7.5
30
A
A
V
Maximum Pulsed Drain-Source
Diode Forward Current
正向压降
ISM
Drain-Source Diode Forward
Voltage
VSD
VGS=0V,
IS=7.0A
1.4
反向恢复时间
trr
-
-
315
2.6
-
-
ns
Reverse recovery time
反向恢复电荷
VGS=0V, IS=7.0A
dIF/dt=100A/μs
(note 4)
Qrr
μC
Reverse recovery charge
热特性THERMAL CHARACTERISTIC
最大
Max
JCS7N65CB JCS7N65FB
项
目
符 号
单 位
Parameter
Symbol
Unit
结到管壳的热阻
Rth(j-c)
Rth(j-A)
0.85
62.5
2.6
℃/W
℃/W
Thermal Resistance, Junction to Case
结到环境的热阻
62.5
Thermal Resistance, Junction to Ambient
Notes:
注释:
1 : Pulse width limited by maximum junction
temperature
1:脉冲宽度由最高结温限制
2:L=19.5mH, IAS=7.0A, VDD=50V, RG=25 Ω,起始
结温TJ=25℃
2:L=19.5mH, IAS=7.0A, VDD=50V, RG=25 Ω,Starting
TJ=25℃
3:ISD ≤7.0A,di/dt ≤300A/μs,VDD≤BVDSS,起始结温
TJ=25℃
3 :ISD ≤7.0A,di/dt ≤300A/μs,VDD≤BVDSS, Starting
TJ=25℃
4:脉冲测试:脉冲宽度≤300μs,占空比≤2%
5:基本与工作温度无关
4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2%
5:Essentially independent of operating temperature
版本:201103A
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