R
JCS7N60
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
Transfer Characteristics
On-Region Characteristics
VGS
Top
15V
10V
8V
7V
10
10
6.5V
6V
25℃
5.5V
Bottom 5V
150℃
1
Notes：
1. 250μs pulse test
2. TC=25℃
Notes：
1.250μs pulse test
2.VDS=40V
1
0.1
2
4
6
8
10
1
10
VGS [V]
VDS [V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
1.40
1.35
10
VGS=10V
1.30
1.25
1.20
1.15
25℃
1
1.10
150℃
VGS=20V
Notes：
1. 250μs pulse test
1.05
2. VGS=0V
Note ：Tj=25℃
1.00
0.1
0.95
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
0
2
4
6
8
10
VSD [V]
ID [A]
Gate Charge Characteristics
Capacitance Characteristics
12
10
8
VDS=480V
VDS=300V
VDS=120V
6
4
2
0
0
10
20
30
40
50
60
Qg Toltal Gate Charge [nC]
版本：201006A
5/12
JSMC [ JILIN SINO-MICROELECTRONICS CO., LTD. ]
