R
JCS7N60
电特性 ELECTRICAL CHARACTERISTICS
项
目
符 号
测试条件
最小 典型最 大单 位
Parameter
关态特性 Off –Characteristics
漏-源击穿电压
Symbol
Tests conditions
Min Typ Max Units
BVDSS
ID=250μA, VGS=0V
600
-
-
-
-
V
Drain-Source Voltage
击穿电压温度特性
ΔBVDSS/Δ ID=250μA, referenced to
Breakdown Voltage Temperature
Coefficient
0.65
V/℃
TJ
25℃
VDS=600V,VGS=0V,
零栅压下漏极漏电流
-
-
-
-
10
μA
IDSS
TC=25℃
Zero Gate Voltage Drain Current
VDS=480V,
TC=125℃
100 μA
正向栅极体漏电流
Gate-body leakage current,
forward
IGSSF
VDS=0V, VGS =30V
-
-
-
-
100 nA
反向栅极体漏电流
Gate-body leakage current,
reverse
IGSSR
VDS=0V, VGS =-30V
-100 nA
通态特性On-Characteristics
阈值电压
VGS(th)
RDS(ON)
gfs
VDS = VGS , ID=250μA
VGS =10V , ID=3.5A
VDS = 40V, ID=3.5A(note 4)
VDS=25V,
2.0
-
4.0
V
Ω
S
Gate Threshold Voltage
静态导通电阻
Static Drain-Source
On-Resistance
-
-
1.0 1.2
正向跨导
8.2
-
Forward Transconductance
动态特性Dynamic Characteristics
输入电容
Ciss
Coss
Crss
-
-
-
1380 1800 pF
115 150 pF
Input capacitance
输出电容
V
GS =0V,
f=1.0MHZ
Output capacitance
反向传输电容
23
30
pF
Reverse transfer capacitance
版本:201006A
3/12