R
JCS740
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
Transfer Characteristics
On-Region Characteristics
VGS
Top
15V
10V
8V
7V
10
6.5V
6V
5.5V
10
25℃
Bottom 5V
150℃
1
Notes：
1.250μs pulse test
2.VDS=40V
Notes：
1. 250μs pulse test
2. TC=25℃
0.1
1
2
4
6
8
10
1
10
VDS [V]
VGS [V]
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
On-Resistance Variation vs.
Drain Current and Gate Voltage
1.05
1.00
10
VGS=10V
25℃
0.95
0.90
1
VGS=20V
150℃
0.85
Notes：
1. 250μs pulse test
2. VGS=0V
0.80
Note ：Tj=25℃
0.1
0.4
0.75
0.6
0.8
1.0
1.2
1.4
1.6
0
1
2
3
4
5
6
7
8
VSD [V]
ID [A]
Capacitance Characteristics
Gate Charge Characteristics
12
10
8
C =C +C (C =shorted)
iss gs gd ds
3
VDS=320V
3x10
C =C +C
oss ds gd
C =C
rss gd
VDS=200V
VDS=80V
3
2x10
6
4
3
1x10
2
0
0
-1
0
10
1
10
0
4
8
12
16
20
24
28
32
10
Qg Toltal Gate Charge [nC]
VDS Drain-Source Voltage [V]
版本：201008B
5/12
JSMC [ JILIN SINO-MICROELECTRONICS CO., LTD. ]
