R
JCS740
电特性 ELECTRICAL CHARACTERISTICS
项
目
符 号
测试条件
最小 典型最大 单位
Parameter
关态特性 Off –Characteristics
漏-源击穿电压
Symbol
Tests conditions
Min Typ Max Units
BVDSS
ID=250μA, VGS=0V
400
-
-
-
-
V
Drain-Source Voltage
击穿电压温度特性
ΔBVDSS/Δ ID=250μA, referenced to
Breakdown Voltage Temperature
Coefficient
0.4
V/℃
TJ
25℃
VDS=400V,VGS=0V,
零栅压下漏极漏电流
-
-
-
-
10
μA
IDSS
TC=25℃
Zero Gate Voltage Drain Current
VDS=320V,
TC=125℃
100 μA
正向栅极体漏电流
Gate-body leakage current,
forward
IGSSF
VDS=0V, VGS =30V
-
-
-
-
100 nA
反向栅极体漏电流
Gate-body leakage current,
reverse
IGSSR
VDS=0V, VGS =-30V
-100 nA
通态特性On-Characteristics
阈值电压
VGS(th)
RDS(ON)
gfs
VDS = VGS
,
ID=250μA
2.0
-
4.0
V
Ω
S
Gate Threshold Voltage
静态导通电阻
Static Drain-Source
On-Resistance
VGS =10V , ID=5.0A
-
-
0.43 0.54
正向跨导
VDS = 40V, ID=5.0A(note
4)
9.6
-
Forward Transconductance
动态特性Dynamic Characteristics
输入电容
VDS=25V,
Ciss
Coss
Crss
-
-
-
1400 1800 pF
150 195 pF
Input capacitance
输出电容
V
GS =0V,
f=1.0MHZ
Output capacitance
反向传输电容
35 45
pF
Reverse transfer capacitance
版本:201008B
3/12