JMnic
Product Specification
Silicon NPN Power Transistors
2SC867
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
CONDITIONS
MIN
150
5
TYP.
MAX
UNIT
V
IC=30mA; IB=0
IE=1mA; IC=0
V
IC=1A; IB=0.2 A
IC=1A; IB=0.2 A
VCB=400V;IE=0
VEB=5V; IC=0
1.0
1.5
V
V
100
100
μA
μA
IEBO
Emitter cut-off current
hFE
DC current gain
IC=0.1A ; VCE=3V
IC=0.2A ; VCE=10V
50
fT
Transition frequency
8
MHz
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
