JMnic
Product Specification
Silicon NPN Power Transistors
2SC867
DESCRIPTION
·With TO-66 package
·High collector-base breakdown voltage
:VCBO=400V(min)
APPLICATIONS
·For high voltage and switching applications
PINNING(see Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbol
3
Absolute maximum ratings(Ta=℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
UNIT
V
Open emitter
400
Open base
150
V
Open collector
5
V
1
2
A
ICM
Collector current-peak
Total power dissipation
Junction temperature
Storage temperature
A
PD
TC=25℃
23
W
℃
℃
Tj
150
-55~150
Tstg