Product Specification
www.jmnic.com
Silicon PNP Power Transistors
2N6029 2N6030
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
100
120
TYP.
MAX
UNIT
2N6029
2N6030
Collector-emitter
sustaining voltage
VCEO(sus)
IC=0.2A ;IB=0
V
VCEsat-1
VCEsat-2
VBEsat
VBE
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
IC=10A; IB=1A
1.0
2.0
1.8
1.5
1.0
V
V
IC=16A ;IB=4A
IC=10A; IB=1A
V
IC=8A ; VCE=2V
VCB=ratedVCBO; IE=0
VCE=50V; IB=0
V
ICBO
Collector cut-off current
mA
2N6029
Collector cut-off current
2N6030
ICEO
1.0
mA
VCE=60V; IB=0
VCE=ratedVCB
1.0
5.0
1.0
100
80
Collector cut-off current
(VBE(off)=1.5V)
ICEV
IEBO
hFE-1
mA
mA
VCE=ratedVCB; TC=150℃
VEB=7V; IC=0
Emitter cut-off current
2N6029
DC current gain
25
20
4
IC=8A ; VCE=2V
2N6030
hFE-2
COB
fT
DC current gain
IC=16A ; VCE=2V
Output capacitance
Transition frequency
IE=0 ; VCB=10V ;f=0.1MHz
IC=1A ; VCE=20V
1000
pF
1.0
MHz
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
