Product Specification
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Silicon PNP Power Transistors
2N6029 2N6030
DESCRIPTION
·With TO-3 package
·Complement to type 2N5629 2N5630
APPLICATIONS
·For high voltage and high power
amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
3
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
Open emitter
VALUE
100
120
100
120
7
UNIT
2N6029
2N6030
2N6029
2N6030
VCBO
Collector-base voltage
V
VCEO
Collector-emitter voltage
Open base
V
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current
Open collector
V
A
16
Collector current-peak
Base current
20
A
5.0
A
PD
Tj
Total Power Dissipation
Junction temperature
Storage temperature
TC=25℃
200
150
-65~200
W
℃
℃
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance junction to case
VALUE
UNIT
Rth j-c
0.875
℃/W
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
