JST24 Series
JieJie Microelectronics CO. , Ltd
FIG.1: Maximum power dissipation versus RMS
FIG.2: RMS on-state current versus case
on-state current
temperature
IT(RMS) (A)
30
P(w)
36
α=180°
TO-220B(Non-Ins)
25
27
18
9
TO-263
TO-220A(Ins)/
TO-220F(Ins)
20
15
10
5
Tc (℃)
IT(RMS) (A)
0
0
0
0
5
10
15
20
25
25
50
75
100
125
FIG.3: Surge peak on-state current versus
FIG.4: On-state characteristics (maximum
number of cycles
values)
ITM (A)
ITSM (A)
200
300
240
180
t=20ms
One cycle
100
Tj=125℃
10
1
120
60
0
Tj=25℃
VTM (V)
Number of cycles
10 100
0
1
2
3
4
5
1
1000
FIG.6: Relative variations of gate trigger current,
holding current and latching current versus
junction temperature
FIG.5: Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and
corresponging value of I2t (dI/dt < 50A/μs)
2
ITSM (A), I2t (A s)
IGT,IH,IL(Tj) /IGT,IH,IL(Tj=25℃)
3.0
4000
2.5
2.0
ITSM
IGT
1000
dI/dt
1.5
1.0
IH&IL
I2t
0.5
0.0
Tj (℃)
40 60
tp(ms)
100
0.01
-40 -20
0
20
80 100 120 140
0.1
1
10 20
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