JST24 Series
JieJie Microelectronics CO. , Ltd
Non repetitive surge peak on-state current
(full cycle, F=50Hz)
I2t value for fusing (tp=10ms)
ITSM
I2t
250
340
50
A
A2s
A/μs
Critical rate of rise of on-state current
(IG =2×IGT)
dI/dt
Peak gate current
IGM
PG(AV)
PGM
4
1
A
Average gate power dissipation
Peak gate power
W
W
10
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
VDRM /VRRM: 600/800V
JST24-600/800V
Symbol
Test Condition
Quadrant
Unit
BW
CW
IGT
Ⅰ-Ⅱ-Ⅲ
Ⅰ-Ⅱ-Ⅲ
MAX
MAX
50
35
mA
V
VD =12V RL =33Ω
VGT
1.3
0.2
VD =VDRM Tj =125℃
RL =3.3KΩ
VGD
Ⅰ-Ⅱ-Ⅲ
MIN
V
Ⅰ-Ⅲ
80
100
75
70
80
IL
MAX
mA
IG =1.2IGT
Ⅱ
IH
IT =100mA
MAX
MIN
MIN
50
mA
V/μs
V/μs
dV/dt
VD=2/3VDRM Gate Open Tj =125℃
1000
22
500
13
(dV/dt)c Without snubber Tj=125℃
VDRM /VRRM: 1200V
JST24-1200V
Symbol
Test Condition
Quadrant
Unit
BW
CW
IGT
Ⅰ-Ⅱ-Ⅲ
Ⅰ-Ⅱ-Ⅲ
MAX
MAX
50
35
mA
V
VD =12V RL=33Ω
VGT
1.5
0.2
VD =VDRM Tj =125℃
RL =3.3KΩ
VGD
Ⅰ-Ⅱ-Ⅲ
MIN
V
Ⅰ-Ⅲ
90
100
80
70
80
60
IL
MAX
MAX
mA
mA
IG =1.2IGT
Ⅱ
IH
IT =100mA
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