JST16 Series
JieJie Microelectronics CO. , Ltd
FIG.1 Maximum power dissipation versus RMS
FIG.2: RMS on-state current versus case
on-state current
temperature
IT(RMS) (A)
24
P(w)
24
α=180°
20
18
12
6
TO-220B
(Non-Ins)
TO-263
16
12
TO-220F(Ins)
TO-220A(Ins)
8
4
0
IT(RMS) (A)
Tc (℃)
0
0
4
8
12
16
20
0
25
50
75
100
125
FIG.3: Surge peak on-state current versus
FIG.4: On-state characteristics (maximum
number of cycles
values)
ITM (A)
ITSM (A)
200
200
160
120
t=20ms
One cycle
100
Tj=Tjmax
10
1
80
40
0
Tj=25℃
VTM (V)
Number of cycles
10 100
0
1
2
3
4
5
1
1000
FIG.6: Relative variations of gate trigger current,
holding current and latching current versus
junction temperature
FIG.5: Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<20ms, and
corresponging value of I2 t (dI/dt < 50A/μs)
ITSM (A), I2t (A2 s)
IGT,IH,IL(Tj) /IGT,IH,IL(Tj=25℃)
3.0
2000
1000
100
10
2.5
2.0
ITSM
IGT
I2t
1.5
1.0
dI/dt
IH&IL
0.5
0.0
Tj (℃)
40 60
tp(ms)
-40
-20
0
20
80
100 120 140
0.01
0.1
1
10 20
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