JST16 Series
JieJie Microelectronics CO. , Ltd
I2t value for fusing (tp=10ms)
I2t
128
50
A2s
Critical rate of rise of on-state current
(IG =2×IGT)
dI/dt
A/μs
Peak gate current
IGM
PG(AV)
PGM
4
1
5
A
Average gate power dissipation
Peak gate power
W
W
ELECTRICAL CHARACTERISTICS (Tj=25℃unless otherwise specified)
3 Quadrants
Value
Symbol
Test Condition
Quadrant
Unit
BW
CW SW TW
IGT
Ⅰ-Ⅱ-Ⅲ
Ⅰ-Ⅱ-Ⅲ
MAX
MAX
50
35
1.3
10
5
mA
V
VD =12V RL =33Ω
VGT
VD =VDRM Tj =125℃
RL =3.3KΩ
VGD
Ⅰ-Ⅱ-Ⅲ
MIN
0.2
50
V
Ⅰ-Ⅲ
70
80
60
30
40
25
15
20
15
IL
MAX
mA
mA
IG =1.2IGT
Ⅱ
60
40
IH
IT =100mA
MAX
MIN
dV/dt
VD=2/3VDRM Gate Open Tj =125℃
1000 500 200 100 V/μs
4 Quadrants
Value
Unit
Symbol
Test Condition
Quadrant
B
C
Ⅰ-Ⅱ-Ⅲ
Ⅳ
50
70
25
50
IGT
MAX
mA
VD =12V RL =33Ω
VGT
VGD
ALL
MAX
MIN
1.5
0.2
V
V
VD =VDRM Tj =125℃
RL =3.3KΩ
ALL
Ⅰ-Ⅲ-Ⅳ
70
100
60
50
80
IL
MAX
mA
IG =1.2IGT
Ⅱ
IH
IT =100mA
MAX
MIN
40
mA
dV/dt
VD=2/3VDRM Gate Open Tj=125℃
500
200
V/μs
TEL：+86-513-83639777
- 2 / 7-
http://www.jjwdz.com
JIEJIE [ JIEJIE MICROELECTRONICS CO.,Ltd ]
