JST139 Series
JieJie Microelectronics CO. , Ltd
FIG.1 Maximum power dissipation versus RMS
FIG.2: RMS on-state current versus case
on-state current
temperature
IT(RMS) (A)
24
P(w)
24
α=180°
20
20
TO-220C
TO-263
16
12
16
12
TO-220F(Ins)
8
4
8
4
0
IT(RMS) (A)
Tc (℃)
0
0
4
8
12
16
20
0
25
50
75
100
125
FIG.3: Surge peak on-state current versus
FIG.4: On-state characteristics (maximum
number of cycles
values)
ITM (A)
ITSM (A)
100
140
120
100
80
t=20ms
One cycle
Tj=Tjmax
10
60
40
Tj=25℃
20
0
VTM (V)
Number of cycles
100
1
0
1
2
3
4
5
1
10
1000
FIG.5: Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<20ms, and
corresponging value of I 2t (dI/dt < 50A/μs)
ITSM (A), I t (A s)
2000
FIG.6: Relative variations of gate trigger current
versus junction temperature
2
2
IGT(Tj) /IGT(Tj=25℃)
4.0
1000
IGT4
IGT3
ITSM
3.0
dI/dt
I2t
2.0
1.0
0.0
100
10
IGT1&IGT2
tp(ms)
Tj (℃)
40 60
0.01
0.1
1
10 20
-40 -20
0
20
80 100
120 140
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