JST139 Series
JieJie Microelectronics CO. , Ltd
Average gate power dissipation
Peak gate power
PG(AV)
PGM
0.5
5
W
W
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Value
Symbol
Test Condition
Quadrant
Unit
D
5
E
F
Ⅰ-Ⅱ-Ⅲ
Ⅳ
10
25
1.5
25
70
IGT
MAX
mA
VD=12V RL=33Ω
10
VGT
VGD
ALL
MAX
MIN
V
V
VD=VDRM Tj=125℃
RL=3.3KΩ
ALL
0.2
Ⅰ- Ⅲ
Ⅱ- Ⅳ
15
20
10
5
30
40
25
10
40
60
30
50
IL
MAX
mA
IG=1.2IGT
IH
IT=100mA
MAX
MIN
mA
dV/dt
VD=2/3VDRM Gate Open Tj=125℃
V/μs
STATIC CHARACTERISTICS
Symbol
Parameter
ITM=20A tp=380μs
Value(MAX)
Unit
V
VTM
IDRM
IRRM
Tj=25℃
1.65
5
Tj=25℃
μA
mA
VD=VDRM VR=VRRM
Tj=125℃
1
THERMAL RESISTANCES
Symbol
Parameter
Value
3.0
Unit
TO-220C
TO-220F(Ins)
TO-263
Rth(j-c)
junction to case(AC)
3.7
℃/W
2.1
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