JST136 Series
JieJie Microelectronics CO. , Ltd
Peak gate current
IGM
PG(AV)
PGM
2
0.5
5
A
Average gate power dissipation
Peak gate power
W
W
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Value
Symbol
Test Condition
Quadrant
Unit
D
5
E
F
Ⅰ-Ⅱ-Ⅲ
Ⅳ
10
25
1.5
25
70
IGT
MAX
mA
VD=12V
10
VGT
VGD
ALL
MAX
MIN
V
V
VD=VDRM Tj=125℃
RL=3.3KΩ
ALL
0.2
Ⅰ-Ⅲ-Ⅳ
20
35
15
5
30
45
25
50
0.5
40
60
30
50
5
IL
MAX
mA
IG=1.2IGT
Ⅱ
IH
IT=100mA
MAX
MIN
MIN
mA
V/μs
V/μs
dV/dt
VD=2/3VDRM Gate Open Tj=125℃
(dV/dt)c (dI/dt)c=1.7A/ms Tj=125℃
0.1
STATIC CHARACTERISTICS
Symbol
VTM
Parameter
Value(MAX)
Unit
V
ITM=5.5A tp=380μs
Tj=25℃
1.7
10
1
IDRM
Tj=25℃
μA
mA
VD=VDRM VR=VRRM
IRRM
Tj=125℃
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
TO-251/ TO-252
4.0
TO-220B(Non-Ins)/
TO-220C
Rth(j-c)
junction to case(AC)
3.0
3.3
℃/W
TO-220F(Ins)
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