JST136 Series
JieJie Microelectronics CO. , Ltd
FIG.1 Maximum power dissipation versus RMS
FIG.2: RMS on-state current versus case
on-state current
temperature
IT(RMS) (A)
6
P(w)
6
α=180°
5
5
4
TO-220C/
TO-220B(Non-Ins)
TO-251/
TO-252
4
3
2
3
2
TO-220F(Ins)
1
1
0
IT(RMS) (A)
Tc (℃)
0
0
1
2
3
4
5
0
25
50
75
100
125
FIG.3: Surge peak on-state current versus
FIG.4: On-state characteristics (maximum
number of cycles
values)
ITM (A)
ITSM (A)
30
28
24
20
16
12
8
t=20ms
One cycle
Tj=Tjmax
10
1
Tj=25℃
4
0
VTM (V)
Number of cycles
100
0.1
0
1
2
3
4
5
1
10
1000
FIG.5: Non-repetitive surge peak on-state current
FIG.6: Relative variations of gate trigger current
for a sinusoidal pulse with width tp<20ms and
versus junction temperature
2
corresponding value of I t (Ⅰ-Ⅱ-Ⅲ:dI/dt < 50A/μs;
Ⅳ:dI/dt < 10A/μs)
ITSM (A), I2t (A2s)
IGT(Tj)/IGT(Tj=25℃)
3.5
300
3.0
2.5
ITSM
100
IGT3
IGT1
dI/dt(Ⅰ-Ⅱ-Ⅲ)
dI/dt(Ⅳ)
IGT4
2.0
1.5
10
1
1.0
0.5
0.0
2
I t
IGT2
Tj(℃)
40 60
tp(ms)
-40 -20
0
20
80
100 120 140
0.01
0.1
1
10 20
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