JCT610/810 Series
JieJie Microelectronics CO. , Ltd
FIG.1 Maximum power dissipation versus RMS
FIG.2: RMS on-state current versus case
on-state current
temperature
IT(RMS) (A)
12
P(w)
15
α=180°
TO-251/
TO-220B
TO-252
10
(Non-Ins)
TO-220A(Ins)/
TO-220F(Ins)
10
5
8
6
4
2
0
IT(RMS) (A)
Tc (℃)
0
0
2
4
6
8
10
0
25
50
75
100
125
FIG.3: Surge peak on-state current versus
FIG.4: On-state characteristics (maximum
number of cycles
values)
ITM (A)
ITSM (A)
100
140
120
100
tp=10ms
One cycle
Tj=125℃
80
60
10
40
20
0
Tj=25℃
VTM (V)
Number of cycles
100
1
0
1
2
3
4
5
1
10
1000
FIG.5: Non-repetitive surge peak on-state current
FIG.6: Relative variations of gate trigger
current, holding current and latching current
versus junction temperature
for a sinusoidal pulse with width tp<10ms, and
2
corresponging value of I t (dI/dt < 50A/μs)
ITSM (A), I2t (A s)
IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃)
2
103
3.0
2.5
2.0
ITSM
dI/dt
IGT
102
1.5
1.0
0.5
0.0
IH&IL
I2t
Tj(℃)
40 60
tp(ms)
10
0.01
-40 -20
0
20
80 100 120 140
0.1
1
10
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