JCT610/810 Series
JieJie Microelectronics CO. , Ltd
TO-220A(Ins) /
TO-220F(Ins)
(TC=85℃)
RMS on-state current
IT(RMS)
10
A
Non repetitive surge peak on-state current
(tp=10ms)
I2t value for fusing (tp=10ms)
ITSM
I2t
120
72
A
A2s
A/μs
Critical rate of rise of on-state current
(IG=2×IGT)
dI/dt
50
Peak gate current
IGM
PG(AV)
PGM
4
1
5
A
Average gate power dissipation
Peak gate power
W
W
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Value
Symbol
Test Condition
Unit
MIN.
TYP.
MAX.
10
1.5
-
IGT
VGT
VGD
IL
-
-
-
-
-
-
-
-
mA
V
VD=12V RL=33Ω
VD=VDRM Tj=125℃ RL=3.3KΩ
IG=1.2IGT
0.2
-
V
25
15
-
mA
mA
V/μs
IH
IT=500mA
-
dV/dt
VD=2/3VDRM Gate Open Tj=125℃
50
STATIC CHARACTERISTICS
Symbol
Parameter
Tj=25℃
Value(MAX)
Unit
V
VTM
IDRM
IRRM
ITM=20A tp=380μs
1.55
5
Tj=25℃
μA
mA
VD=VDRM VR=VRRM
Tj=125℃
1
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