IXFK 25N80
IXFN 25N80
IXFK 27N80
IXFN 27N80
12
10
8
10000
1000
100
Ciss
Coss
Crss
VVDdSs==340000VV
ID==3207AA
IG==110mmA
f = 1MHz
6
4
2
0
0
100
200
300
400
500
0
5
10 15 20 25 30 35 40
Gate Charge - nC
VDS - Volts
Figure7. GateCharge
Figure8.CapacitanceCurves
100
80
60
40
20
0
TJ = 125OC
TJ = 25OC
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD - Volts
Figure 9. Forward Voltage Drop of the Intrinsic Diode
1
D=0.5
0.1
D=0.2
D=0.1
D=0.05
D=0.02
D = Duty Cycle
0.01
D=0.01
Single pulse
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
Figure10.TransientThermalResistance
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
IXYS [ IXYS CORPORATION ]
