IXFK 25N80
IXFN 25N80
IXFK 27N80
IXFN 27N80
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
TO-264 AA Outline
min. typ. max.
VDS = 10 V; ID = 0.5 • ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
16
28
S
Ciss
Coss
Crss
7930 8400 9740
pF
pF
pF
630
146
712 790
192 240
td(on)
tr
td(off)
tf
30
80
75
40
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 Ω (External),
Millimeter
Inches
Max.
.202
Dim.
Min.
Max.
Min.
.190
A
A1
A2
b
b1
b2
4.82
2.54
2.00
5.13
2.89
2.10
.100
.079
.114
.083
Qg(on)
Qgs
320
350 400
nC
nC
nC
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID2538
120
46
56
c
0.53
25.91
19.81
0.83
26.16
19.96
.021
1.020
.780
.033
1.030
.786
Qgd
130 142
D
E
e
RthJC
RthCK
TO-264AA
0.25 K/W
K/W
5.46BSC
.215BSC
J
0.00
0.00
0.25
0.25
.000
.000
.010
.010
TO-264AA
0.15
0.05
K
L
L1
P
20.32
2.29
20.83
2.59
.800
.090
.820
.102
RthJC
RthCK
miniBLOC, SOT-227 B
miniBLOC, SOT-227 B
0.24 K/W
K/W
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
miniBLOC, SOT-227 B
Symbol
IS
TestConditions
VGS = 0 V
27N80
25N80
27
25
A
A
ISM
Repetitive;
pulse width limited by TJM 25N80
27N80
108
100
A
A
VSD
IF = 100 A, VGS = 0 V,
1.5
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
M4 screws (4x) supplied
trr
IF = IS, -di/dt = 100 A/µs, VR = 100 V TJ =25°C
250 ns
400 ns
µC
Dim.
Millimeter
Inches
TJ =125°C
TJ =25°C
Min.
Max.
Min.
Max.
QRM
IRM
2
17
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
A
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
G
H
30.12
38.00
30.30
38.23
1.186
1.496
1.193
1.505
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
IXYS [ IXYS CORPORATION ]
