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IS61LV25616AL-10TLI 参数 Datasheet PDF下载

IS61LV25616AL-10TLI图片预览
型号: IS61LV25616AL-10TLI
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×16高速异步静态CMOS与3.3V供电的RAM [256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY]
分类和应用:
文件页数/大小: 16 页 / 382 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS61LV25616AL
AC WAVEFORMS
WRITE CYCLE NO. 1
(CE Controlled, OE is HIGH or LOW)
(1 )
t
WC
ADDRESS
VALID ADDRESS
t
SA
CE
t
SCE
t
AW
t
PWE1
t
PWE2
t
PBW
t
HA
WE
UB, LB
t
HZWE
D
OUT
DATA UNDEFINED
HIGH-Z
t
LZWE
t
SD
D
IN
t
HD
DATA
IN
VALID
UB_CEWR1.eps
Notes:
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the CE and WE inputs and at least
one of the LB and UB inputs being in the LOW state.
2. WRITE = (CE)
[
(LB) = (UB)
]
(WE).
WRITE CYCLE NO. 2
(WE Controlled.
OE
is HIGH During Write Cycle)
(1,2)
t
WC
ADDRESS
VALID ADDRESS
t
HA
OE
CE
LOW
t
AW
WE
t
PWE1
t
PBW
t
SA
UB, LB
t
HZWE
D
OUT
DATA UNDEFINED
HIGH-Z
t
LZWE
t
SD
D
IN
t
HD
DATA
IN
VALID
UB_CEWR2.eps
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. F
12/15/2011
9