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IS61LV25616AL-10TL 参数 Datasheet PDF下载

IS61LV25616AL-10TL图片预览
型号: IS61LV25616AL-10TL
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×16高速异步静态CMOS与3.3V供电的RAM [256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 16 页 / 382 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS61LV25616AL
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
I
cc
I
sb
Parameter
V
DD
Dynamic Operating
Supply Current
TTL Standby Current
(TTL Inputs)
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
Test Conditions
V
DD
=
Max.,
Com.
I
out
= 0
mA, f = f
maX
Ind.
V
DD
=
Max.,
Com.
V
In
= V
IH
or V
IL
Ind.
CE ≥ V
IH
, f = f
maX
.
V
DD
=
Max.,
V
In
= V
IH
or V
IL
CE ≥ V
IH
, f = 0
V
DD
=
Max.,
CE ≥ V
DD
– 0.2V,
V
In
V
DD
– 0.2V,
or
V
In
0.2V,
f = 0
Com.
Ind.
Com.
Ind.
-10
Min. Max.
— 100
— 110
50
— 55
20
25
15
20
-12
Min. Max.
— 90
— 100
45
— 50
20
25
15
20
Unit
mA
mA
I
sb
1
I
sb
2
mA
mA
Note:
1. At f = f
maX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Shaded area product in development
CAPACITANCE
(1)
Symbol
c
In
c
out
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
V
In
= 0V
V
out
= 0V
Max.
6
8
Unit
pF
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. F
12/15/2011
5