欢迎访问ic37.com |
会员登录 免费注册
发布采购

IS61LV25616AL-10TL 参数 Datasheet PDF下载

IS61LV25616AL-10TL图片预览
型号: IS61LV25616AL-10TL
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×16高速异步静态CMOS与3.3V供电的RAM [256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 16 页 / 382 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
 浏览型号IS61LV25616AL-10TL的Datasheet PDF文件第1页浏览型号IS61LV25616AL-10TL的Datasheet PDF文件第2页浏览型号IS61LV25616AL-10TL的Datasheet PDF文件第3页浏览型号IS61LV25616AL-10TL的Datasheet PDF文件第5页浏览型号IS61LV25616AL-10TL的Datasheet PDF文件第6页浏览型号IS61LV25616AL-10TL的Datasheet PDF文件第7页浏览型号IS61LV25616AL-10TL的Datasheet PDF文件第8页浏览型号IS61LV25616AL-10TL的Datasheet PDF文件第9页  
IS61LV25616AL
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter
V
term
t
stg
P
t
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
Value
–0.5 to V
DD
+0.5
–65 to +150
1.0
Unit
V
°C
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
OPERATING RANGE
V
DD
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
10ns
3.3V +10%, -5%
3.3V +10%, -5%
12ns
3.3V + 10%
3.3V + 10%
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
V
oH
V
oL
V
IH
V
IL
I
LI
I
Lo
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Output Leakage
Test Conditions
V
DD
=
Min., I
oH
=
–4.0 mA
V
DD
=
Min., I
oL
=
8.0 mA
GND ≤ V
In
V
DD
GND ≤ V
out
V
DD
Outputs Disabled
Com.
Ind.
Com.
Ind.
Min.
2.4
2.0
–0.3
–2
–5
–2
–5
Max.
0.4
V
DD
+ 0.3
0.8
2
5
2
5
Unit
V
V
V
V
µA
µA
Notes:
1.
V
IL
(min.) = –2.0V for pulse width less than 10 ns.
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. F
12/15/2011