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IS61LV12816L-10TLI 参数 Datasheet PDF下载

IS61LV12816L-10TLI图片预览
型号: IS61LV12816L-10TLI
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×16高速CMOS静态RAM与3.3V电源 [128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY]
分类和应用:
文件页数/大小: 16 页 / 112 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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®
IS61LV12816L  
ISSI  
WRITE CYCLE NO. 4(LB, UB Controlled, Back-to-Back Write) (1,3)  
t
WC  
t
WC  
ADDRESS 1  
ADDRESS 2  
ADDRESS  
OE  
CE  
t
SA  
LOW  
t
HA  
SA  
t
HA  
t
WE  
t
PBW  
t
PBW  
UB, LB  
WORD 1  
WORD 2  
t
HZWE  
t
LZWE  
HIGH-Z  
DOUT  
DATA UNDEFINED  
t
HD  
t
HD  
t
SD  
t
SD  
DATAIN  
VALID  
DATAIN  
VALID  
DIN  
UB_CEWR4.eps  
Notes:  
1. The internal Write time is defined by the overlap of CE = LOW, UB and/or LB = LOW, and WE = LOW. All signals must be  
in valid states to initiate a Write, but any can be deasserted to terminate the Write. The tSA, tHA, tSD, and tHD timing is  
referenced to the rising or falling edge of the signal that terminates the Write.  
2. Tested with OE HIGH for a minimum of 4 ns before WE = LOW to place the I/O in a HIGH-Z state.  
3. WE may be held LOW across many address cycles and the LB, UB pins can be used to control the Write function.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. F  
11  
10/27/05